| PART |
Description |
Maker |
| MIE-324A2 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-304A2 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| L532 |
IGBT phaseleg in ISOPLUS i4-PAC IGBTphaseleg在ISOPLUS i4 - PAC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| HSDL-4260 |
High-Power T-1篓煤 (5mm) AlGaAs Infrared (875nm) Lamp
High-Power T-1? (5mm) AlGaAs Infrared (875nm) Lamp
|
Lite-On Technology Corporation
|
| BD-C406ND |
red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BA-4D7UW-A |
super red chips which are made from AlGaAs on GaAs substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BD-E50DRD |
super red chips, which are made from AlGaAs on GaAs substrate
|
Bright LED Electronics Corp.
|
| BA-10S1UD |
super red chips, which are made from AlGaAs on GaAs substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BA-4S7UW |
super red chips, which are made from AlGaAs on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
